Infineon has introduced the EiceDRIVER Power 2EP1xxR family of full-bridge transformer drivers for IGBT, SiC and GaN gate ...
Valeo, an automotive technology company, and Rohm Semiconductor are collaborating to optimise the next generation of power ...
Ghislain Despesse, Research Director at CEA-Leti, explains how, building on its earlier breakthroughs introducing a new way ...
Vishay Intertechnology has introduced a150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6x5) package ...
Funding supports GF’s Vermont GaN facility modernisation and New York expansion plans GlobalFoundries and the US Department of Commerce have announced an award of up to $1.5 billion in direct funding ...
New facility will consolidate previously dispersed assembly and production lines Mitsubishi Electric will invest approximately $64m (10 billion yen) to construct a new facility for the assembly and ...
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