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powerelectronicsworld.net
Ancora Semiconductor raises $14.6M - News
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Infineon signs deals with two Chinese SiC suppliers - News
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GaN patent wars webinar 20th July - News
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Wolfspeed announces plans to build SiC fab in Germany - News
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Onsemi and Penn State to work together on SiC - News
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Australia’s Oldest Utility Scale Solar Plant Celebrates Ten Years - News
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Turning up the heat on GaN - News
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Hofer and ETH Zurich begin GaN inverter project - News
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Geely signs SiC agreement with STMicroelectronics - News
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Gate to the future - News
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powerelectronicsworld.net
EU project paves way for improved grid resilience - News
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GaN Systems co-founder joins QPT - News
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VisIC, Heraeus and PINK collaborate on GaN EV module - News
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EPC introduces 40V rad hard GaN FETs - News
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Perfecting the art of power management performance
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GF awarded $35M to accelerate GaN plans - News
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Toshiba launches 2200V dual SiC MOSFET module - News
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Navitas launches GaNSafe - News
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CS substrate market to double by 2027 - News
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Power players to converge at PCIM Asia 2023 - News
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Infineon to build world’s largest 200mm SiC fab in Kulim - News
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NREL reveals novel gallium oxide module - News
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Trimming the on-resistance of GaN MOSFETs - News
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Denso and Mitsubishi invest $1B in Coherent’s SiC business - News
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PCIM 2025: growing to meet demand - News
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OKI develops GaN lift off/bonding technology - News
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TI and Delta open GaN lab in Taiwan - News
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Infineon develops first 300mm power GaN wafer - News
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New EPC GaN FET targets AI and advanced computing - News
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Onsemi completes Korean SiC facility - News
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Transphorm and Allegro partner on GaN driver solution - News
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AngelTech Rewind 2023
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Toshiba 3rd gen SiC MOSFETs reduce switching losses - News
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Onsemi chooses Czech Republic for SiC production - News
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Refining GaN substrate thinning - News
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