UK firm III-V Epi has announced that its director of epitaxy, Neil Gerrard, is amongst the expert contributors to a white ...

According to a report in Defense News, the Norwegian Ministry of Defence will co-develop a new GaN-based radar in partnership with Raytheon and Kongsberg Defence & Aerospace to boost the capabilities ...

Toray, with subsidiary company Tory Engineering, has now developed a material for fast laser transfers of InP and other optical semiconductors. They have also worked on a material to 'catch' ...

To meet the needs of industrial applications transitioning to higher power levels using increased DC link voltage, Infineon has released the first discrete SiC Schottky diode with a breakdown voltage ...

Semiconductor developer BluGlass Limited has secured an order of around $800,000 for the first of a three-phase joint development agreement with Uviquity, a leading US-based venture-backed start-up ...

They say the conversion efficiency recorded in their α-In 2 Se 3 device signals a promising advancement for future solar cell technologies and photosensors.

The state-of-the-art pilot line integrates Comptek's proprietary Kontrox passivation technology with other widely used ...

Focused on III-V R&D for its parent companies Thales, Nokia and CEA- Leti, III-V Lab is celebrating 20 years if successful ...

French MBE company Riber has announced the sale of an MBE 49 GaN production system to a European manufacturer. This European ...

Grenoble-based IR sensor firm Lynred has announced the successful conclusion of its biggest space contract to date.

The US Department of Energy has awarded just under $975,000 to Charles Paillard, a University of Arkansas research professor of physics and director of the Smart Ferroic Materials Center, to study ...

Halide perovskites are a promising material for making more efficient solar cells. Now, researchers at Chalmers University of ...