It is a form of flash memory, which means it can be electrically erased and reprogrammed. NAND Flash is named after the NAND (NOT-AND) logic gate, which is used in its basic architecture. The term ...

The memory sub-system consists of a memory controller, a physical/IO layer (PHY) and a memory device, such as DRAM or Flash. The memory sub-system ... parameters which are evaluated during early ...

[Gene] has a project that writes a lot of settings to a PIC microcontroller’s Flash memory. Flash has limited read/erase cycles, and although the obvious problem ...

However, this block erasing is flash memory's peculiarity. Flash memory cells must be erased before they can be written to. Cells make up pages, and pages make up blocks, but while pages are ...

3D DRAM can mean two things, one of which is already in production. “The most popular use case for 3D DRAM is HBM ...

Samsung's 9th-generation 280-layer V-NAND flash memory has only recently entered mass production, with the first commercial ...

Flash Memory Summit 2023 ... storage platform that extends the performance of NVMe flash to a shared storage architecture. By separating storage resources from compute and sharing them over ...

The two companies in late March jointly unveiled their newest 3D flash memory technology they said reduces costs with new processes and architecture. Speculation about bringing Western Digital and ...

Imec has proposed a 3D integrated  CCD that can operate as a block-addressable buffer memory, in support of data-intensive ...